The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Aug. 20, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chin-Shan Wang, Hsinchu, TW;

Yi-Miaw Lin, Taipei County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01); H01L 23/522 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 23/5226 (2013.01); H01L 28/40 (2013.01); H01L 29/0847 (2013.01); H01L 29/408 (2013.01); H01L 29/4232 (2013.01); H01L 29/66795 (2013.01);
Abstract

The present disclosure provides a semiconductor structure, including: a substrate having a gate structure; a first interlayer over the substrate; a contact adjacent to the gate structure and penetrating through the first interlayer; a dielectric layer over the first interlayer and the contact; a conductive plug electrically connecting with the gate structure and penetrating the first interlayer; and a conductive bridge electrically connecting with the conductive plug and being directly over the contact, the conductive bridge being separated from the contact by a portion of the dielectric layer.


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