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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10505041 B1

PDFFull Text
Date of Patent:
Dec. 10, 2019

Filed:

Mar. 26, 2017

Semiconductor device having epitaxial layer with planar surface and protrusions

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chun-Wei Yu, Tainan, TW;

Hsu Ting, Tainan, TW;

Chueh-Yang Liu, Tainan, TW;

Yu-Ren Wang, Tainan, TW;

Kuang-Hsiu Chen, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Peniel M Gumedzoe

Assistant Examiner:

Christopher A Johnson

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/165 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7845 (2013.01); H01L 21/02065 (2013.01); H01L 21/28123 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 23/535 (2013.01); H01L 27/092 (2013.01); H01L 29/165 (2013.01); H01L 29/41766 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/0847 (2013.01);
Abstract

A semiconductor device includes: a substrate; a gate structure on the substrate; and an epitaxial layer in the substrate adjacent to the gate structure, in which the epitaxial layer includes a planar surface and protrusions adjacent to two sides of the planar surface. Preferably, a contact plug is embedded in part of the epitaxial layer, and a silicide is disposed under the contact plug, in which a bottom surface of the silicide includes an arc.

Find Patent Forward Citations

Yu, Chun-Wei. (2019). Semiconductor device having epitaxial layer with planar surface and protrusions (U.S. Patent No. 10505041). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10505041

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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