The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Nov. 17, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jing-Ru Lin, Kaohsiung, TW;
Cheng-Bo Shu, Tainan, TW;
Tsung-Yu Yang, Tainan, TW;
Chung-Jen Huang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a semiconductor substrate and a pair of control gate stacks on the cell region. Each of the control gate stacks includes a storage layer and a control gate on the storage layer. The memory device includes at least one high-κ metal gate stack disposed on the substrate. The high-κ metal gate stack has a metal gate and a top surface of the control gate is lower than a top surface of the metal gate. The storage layer includes two oxide layers and a nitride layer, and the nitride layer is interposed in between the two oxide layers.