The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Sep. 17, 2018
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Po-Wen Su, Kaohsiung, TW;
Wen-Yen Huang, Changhua County, TW;
Kuan-Ying Lai, Chiayi, TW;
Shui-Yen Lu, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/033 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/0337 (2013.01); H01L 21/28088 (2013.01); H01L 21/823842 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device includes a metal gate on a substrate, in which the metal gate includes a first work function metal (WFM) layer and the first WFM layer further includes a first vertical portion, a second vertical portion, wherein the first vertical portion and the second vertical portion comprise different heights, and a first horizontal portion connecting the first vertical portion and the second vertical portion.