The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Jun. 06, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Zhibiao Zhou, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate, a semiconductor channel layer, a gate electrode, and a first memory structure. The semiconductor channel layer is disposed on the substrate. The gate electrode and the first memory structure are disposed on the semiconductor channel layer. The first memory structure includes a first bottom plate, a first top plate, and a first memory element layer. The first top plate is disposed on the first bottom plate. The first memory element layer is disposed between the first bottom plate and the first top plate. The first bottom plate contacts the semiconductor channel layer. Purposes of process simplification and/or memory density enhancement may be achieved by integrating a transistor with a memory structure.