The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Feb. 09, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Zhi-Sheng Zheng, New Taipei, TW;
Chih-Lin Wang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76802 (2013.01); H01L 21/76834 (2013.01); H01L 21/76883 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 21/76885 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An interconnection structure includes a first dielectric layer, a first conductor, an etch stop layer, and a second dielectric layer. The first conductor is partially in the first dielectric layer and having a portion protruding from the first dielectric layer. The etch stop layer is on the first dielectric layer and covering the protruding portion of the first conductor. The second dielectric layer is on the etch stop layer. A bottom surface of the second dielectric layer has a portion in a position lower than a top of the first conductor.