The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Feb. 07, 2017
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Shuji Nishimoto, Saitama, JP;
Yoshiyuki Nagatomo, Saitama, JP;
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 21/52 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/52 (2013.01); H01L 21/4867 (2013.01); H01L 23/3735 (2013.01); H01L 24/08 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/43 (2013.01); H01L 24/48 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03505 (2013.01); H01L 2224/04 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/2732 (2013.01); H01L 2224/2744 (2013.01); H01L 2224/27505 (2013.01); H01L 2224/27515 (2013.01); H01L 2224/27618 (2013.01); H01L 2224/2939 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29294 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29387 (2013.01); H01L 2224/29388 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/4809 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73251 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8083 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80439 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/8383 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83424 (2013.01); H01L 2224/83487 (2013.01); H01L 2224/83895 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3512 (2013.01);
Abstract
A semiconductor device of the present invention includes a circuit layer formed of a conductive material, a semiconductor element mounted on a first surface of the circuit layer, and a ceramic substrate disposed on a second surface of the circuit layer, in which a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer, and the Ag layer of the Ag underlayer and the semiconductor element are directly joined together.