The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Jun. 16, 2016
Applicant:
Tdk Electronics Ag, München, DE;
Inventors:
Tomoya Imura, Tokyo, JP;
Goushi Tauchi, Tokyo, JP;
Masakazu Hirose, Tokyo, JP;
Tomohiro Terada, Tokyo, JP;
Assignee:
TDK ELECTRONICS AG, München, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/475 (2006.01); H01G 4/12 (2006.01); H01B 3/12 (2006.01); H01G 4/30 (2006.01); C01G 23/00 (2006.01); C04B 35/47 (2006.01); C04B 35/63 (2006.01); C04B 35/638 (2006.01); C04B 35/626 (2006.01); C04B 35/64 (2006.01); C04B 41/45 (2006.01); C04B 41/51 (2006.01); C04B 41/88 (2006.01); H01G 4/012 (2006.01); H01G 4/248 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); C01G 23/006 (2013.01); C04B 35/47 (2013.01); C04B 35/475 (2013.01); C04B 35/6262 (2013.01); C04B 35/62645 (2013.01); C04B 35/63 (2013.01); C04B 35/638 (2013.01); C04B 35/64 (2013.01); C04B 41/4578 (2013.01); C04B 41/5111 (2013.01); C04B 41/88 (2013.01); H01B 3/12 (2013.01); H01G 4/1218 (2013.01); H01G 4/30 (2013.01); C01P 2002/34 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3213 (2013.01); C04B 2235/3215 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3236 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/602 (2013.01); C04B 2235/656 (2013.01); C04B 2235/6582 (2013.01); C04B 2235/6583 (2013.01); C04B 2235/768 (2013.01); C04B 2235/80 (2013.01); H01G 4/012 (2013.01); H01G 4/248 (2013.01);
Abstract
A multi-layer ceramic capacitor is disclosed. In an embodiment the dielectric composition includes a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes a low-Bi phase in which a Bi concentration is no greater than 0.8 times the mean Bi concentration in the dielectric composition as a whole.