The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Dec. 21, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Jaesoo Ahn, San Jose, CA (US);
Hsin-wei Tseng, San Jose, CA (US);
Lin Xue, San Jose, CA (US);
Mahendra Pakala, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications, particularly for spin-orbit-torque magnetic random access memory (SOT MRAM) applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a magnetic tunnel junction (MTJ) pillar structure disposed on a substrate, and a gap surrounding the MTJ pillar structure. In yet another embodiment, a magnetic tunnel junction (MTJ) device structure includes a spacer layer surrounding a patterned reference layer and a tunneling barrier layer disposed on a patterned free layer, and a gap surrounding the patterned free layer.