The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Aug. 27, 2018
Winbond Electronics Corp., Taichung, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
A manufacturing method of a semiconductor device includes the following steps. A first conductive layer, a first oxide layer, and a hardmask layer are sequentially formed on a substrate. The hardmask layer and the first oxide layer are patterned to form a stacking structure including a hardmask pattern and a first oxide pattern. An oxidation process is performed, such that a second oxide layer is formed on surfaces of the stacking structure and the first conductive layer, and a region of the first conductive layer adjacent to a sidewall of the stacking structure are oxidized to form an extending oxide pattern. The second oxide layer is removed. The stacking structure is applied as a mask to remove an exposed portion of the first conductive layer and the substrate therebelow, such that a first conductive structure and a recess in the substrate are formed. The stacking structure is removed. The extending oxide pattern is removed.