The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
May. 11, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Takashi Ando, Tuckahoe, NY (US);
ChoongHyun Lee, Rensselaer, NY (US);
Seyoung Kim, Westchester, NY (US);
Wilfried Haensch, Somers, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 13/0007 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1683 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 2013/005 (2013.01); G11C 2013/009 (2013.01); G11C 2213/15 (2013.01); G11C 2213/32 (2013.01); G11C 2213/71 (2013.01);
Abstract
Devices and methods are provided to construct resistive random-access (RRAM) array structures which comprise RRAM memory cells, wherein each RRAM memory cell is formed of multiple parallel-connected RRAM devices to reduce the effects of resistive switching variability of the RRAM memory cells.