The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jul. 20, 2018
Toshiba Memory Corporation, Minato-ku, JP;
Tsutomu Tezuka, Yokohama, JP;
Fumitaka Arai, Yokkaichi, JP;
Keiji Ikeda, Kawasaki, JP;
Tomomasa Ueda, Yokohama, JP;
Nobuyoshi Saito, Tokyo, JP;
Chika Tanaka, Fujisawa, JP;
Kentaro Miura, Kawasaki, JP;
Tomoaki Sawabe, Tokyo, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
According to one embodiment, a memory includes: a first gate of a first transistor and a second gate electrode of the second transistor facing the a semiconductor layer; an oxide semiconductor layer between the first and second transistors and including first to fifth portions in order; a third gate of a first cell facing the first portion; a fourth gate of a third transistor facing the second portion; a fifth gate of a second cell facing the third portion; a sixth gate of a fourth transistor facing the fourth portion; an interconnect connected to the fifth portion; a source line connected to the first transistor; and a bit line connected to the second transistor. A material of the third gate is different from a material of the fourth gate.