The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Sep. 17, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Tamer Coskun, San Jose, CA (US);

Jang Fung Chen, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/66 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); G03F 7/70625 (2013.01); H01L 22/20 (2013.01); H01L 2223/54453 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02321 (2013.01); H01L 2224/96 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/37001 (2013.01);
Abstract

In one embodiment of the invention, a method for correcting a pattern placement on a substrate is disclosed. The method begins by detecting three reference points for a substrate. A plurality of sets of three die location points are detected, each set indicative of an orientation of a die structure, the plurality of sets include a first set associated with a first dies and a second set associated with a second die. A local transformation is calculated for the orientation of the first die and the second on the substrate. Three orientation points are selected from the plurality of sets of three die location points wherein the orientation points are not set members of the same die. A first global orientation of the substrate is calculated from the selected three points from the set of points and the first global transformation and the local transformation for the substrate are stored.


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