The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jun. 28, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Shinichi Uchida, Tokyo, JP;
Yasutaka Nakashiba, Ibaraki, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/84 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 21/84 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 23/564 (2013.01); H01L 27/1203 (2013.01); H01L 27/1207 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01);
Abstract
A semiconductor device includes an annular seal ring formed in a seal ring region surrounding a circuit forming region. The seal ring includes a BOX layer, an n-type semiconductor layer, and an annular electrode portion comprised of multiple layers of wirings. The electrode portion is electrically connected with the n-type semiconductor layer through a plug electrode.