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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10497650 B1

PDFFull Text
Date of Patent:
Dec. 03, 2019

Filed:

Apr. 13, 2017

Semiconductor device and manufacturing method thereof

Applicant:

Amkor Technology, Inc., Tempe, AZ (US);

Inventors:

Soo Hyun Kim, Seoul, KR;

Jae Min Na, Gyeonggi-do, KR;

Dae Gon Kim, Gyeonggi-do, KR;

Tae Kyung Hwang, Seoul, KR;

Kwang Mo Chris Lim, Seoul, KR;

SungSun Park, Seoul, KR;

KyeRyung Kim, Gyeonggi-do, KR;

Assignee:

AMKOR TECHNOLOGY, INC., Tempe, AZ (US);

Attorney:

McAndrews, Held & Malloy, Ltd.

Primary Examiner:

Charles D Garber

Assistant Examiner:

Alia Sabur

Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 21/56 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/4885 (2013.01); H01L 21/563 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 23/3128 (2013.01); H01L 23/49838 (2013.01); H01L 23/66 (2013.01); H01L 24/14 (2013.01); H01L 24/46 (2013.01); H01L 25/0655 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73257 (2013.01); H01L 2224/78301 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor device having an EMI shield layer and/or EMI shielding wires, and a manufacturing method thereof, are provided. In an example embodiment, the semiconductor device includes a semiconductor die, an EMI shield layer shielding the semiconductor die, and an encapsulating portion encapsulating the EMI shield layer. In another example embodiment, the semiconductor device further includes EMI shielding wires extending from the EMI shield layer and shielding the semiconductor die.

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