The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Aug. 13, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Yen-Ting Chen, Hsinchu, TW;
Chia-Lin Hsu, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 29/06 (2006.01); H01L 23/532 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/02263 (2013.01); H01L 21/283 (2013.01); H01L 21/28176 (2013.01); H01L 21/321 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 23/53223 (2013.01); H01L 23/53266 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0611 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/495 (2013.01); H01L 29/51 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01);
Abstract
A method of forming a semiconductor device includes forming a gate dielectric layer on a substrate; forming a barrier layer over the gate dielectric layer; treating the barrier layer to roughen an outer surface of the barrier layer, resulting in a treated barrier layer; and forming a metal layer over the treated barrier layer.