The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Sep. 21, 2017
United Microelectronics Corp., Hsinchu, TW;
Li-Han Chen, Tainan, TW;
Chun-Chieh Chiu, Keelung, TW;
Wei-Chuan Tsai, Changhua County, TW;
Yen-Tsai Yi, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A manufacturing method of an interconnect structure including the following steps is provided. A dielectric layer is formed on a silicon layer, wherein an opening exposing the silicon layer is in the dielectric layer. A metal layer is formed on the surface of the opening. A stress adjustment layer is formed on the metal layer. A thermal process is performed to react the metal layer with the silicon layer to form a metal silicide layer on the silicon layer. The stress adjustment layer is removed after the thermal process is performed. A barrier layer is formed on the surface of the opening.