The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Jun. 13, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Rabie Djemour, Munich, DE;

Michael Bauer, Nittendorf, DE;

Stefan Miethaner, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/67126 (2013.01); H01L 23/29 (2013.01);
Abstract

A method for manipulating ions contained in an encapsulation material for a semiconductor device is provided. The method includes processing the encapsulation material and applying an electric field to the encapsulation material before the encapsulation material is finally cured. The ions contained in the encapsulation material have a mobility that decreases as the encapsulation material cures. By applying the electric field to the encapsulation material before the encapsulation material is finally cured, the amount of ions contained in the encapsulation material is reduced and/or the ions contained are concentrated in one or more regions of the encapsulation material. Corresponding apparatuses and semiconductor packages manufactured by the method are also described.


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