The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Mar. 21, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Iris Moder, Villach, AT;
Sophia Friedler, Vienna, AT;
Ingo Muri, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H01L 21/3213 (2006.01); H01L 21/265 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/324 (2006.01); H01L 21/784 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/265 (2013.01); H01L 21/304 (2013.01); H01L 21/3083 (2013.01); H01L 21/30608 (2013.01); H01L 21/324 (2013.01); H01L 21/784 (2013.01); H01L 29/0661 (2013.01); H01L 29/1095 (2013.01); H01L 29/6634 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 21/26506 (2013.01); H01L 29/0638 (2013.01);
Abstract
According to embodiments, a method for manufacturing a semiconductor device includes forming a mask comprising a pattern of inert structures on a side of a first main surface of a semiconductor substrate. A semiconductor layer is formed over the first main surface, and the semiconductor substrate is thinned from a second main surface opposite to the first main surface. Thereafter, a semiconductor region laterally adjoining the inert structures is anisotropically etched.