The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
May. 29, 2018
Applicant:
Industry-university Cooperation Foundation Hanyang University, Seongdong-gu, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0242 (2013.01); H01L 21/0251 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02639 (2013.01); H01L 21/02658 (2013.01);
Abstract
Disclosed a method of fabricating a gallium nitride substrate using hydride vapor phase epitaxy (HVPE), including a step of injecting ammonia (NH) gas to perform first surface treatment on a sapphire substrate; a step of injecting ammonia gas and hydrogen chloride (HCl) gas to form a buffer layer on the sapphire substrate; a step of injecting ammonia gas to perform second surface treatment on the sapphire substrate; and a step of allowing gallium nitride (GaN) to grow on the sapphire substrate while lowering the flow rate ratio of ammonia gas to hydrogen chloride gas stepwise.