The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Dec. 06, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Yu-Feng Chen, Plano, TX (US);
Byung S. Moon, Plano, TX (US);
Myung Ho Bae, McKinney, TX (US);
Harish N. Venkata, Allen, TX (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G11C 11/408 (2006.01); G06F 13/42 (2006.01); G11C 11/4094 (2006.01); G11C 8/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G06F 13/4243 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 8/12 (2013.01);
Abstract
A memory device may include a memory array comprising at least two sections. Each of the sections may further include multiple memory cells. The memory device may also include one or more controllers designed to receive one or more commands to initiate writing logical data to the multiple memory cells of a first section and a second section. Additionally, the writing may alternate between the first section and the second section until the first section and second section have been entirely written with the logical data.