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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10494712 B1

PDFFull Text
Date of Patent:
Dec. 03, 2019

Filed:

May. 16, 2016

Copper alloy sputtering target and method for manufacturing same

Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Yasushi Morii, Ibaraki, JP;

Tomio Otsuki, Ibaraki, JP;

Assignee:

JX NIPPON MINING & METALS CORPORATION, Tokyo, JP;

Attorney:

Howson & Howson LLP

Primary Examiner:

John J Brayton

Int. Cl.
CPC ...
C23C 14/34 (2006.01); C22C 9/00 (2006.01); C22C 9/01 (2006.01); C22C 9/05 (2006.01); C22F 1/08 (2006.01); C22C 1/02 (2006.01); H01J 37/34 (2006.01); C22F 1/00 (2006.01); H01L 21/285 (2006.01); B22D 7/00 (2006.01); C23C 14/16 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22D 7/005 (2013.01); C22C 1/02 (2013.01); C22C 9/00 (2013.01); C22C 9/01 (2013.01); C22C 9/05 (2013.01); C22F 1/08 (2013.01); C23C 14/165 (2013.01); C23C 14/34 (2013.01); H01J 37/3426 (2013.01); H01L 21/285 (2013.01); H01L 21/2855 (2013.01); H01L 21/28568 (2013.01); C22F 1/00 (2013.01); H01L 21/76873 (2013.01);
Abstract

Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method for manufacturing a copper alloy sputtering target, wherein a copper raw material is melted in a vacuum or an inert gas atmosphere, a reducing gas is thereafter introduced into the melting atmosphere, an alloy element is subsequently added to a molten metal for alloying, and an obtained ingot is processed into a target shape. The present invention aims to provide a copper alloy sputtering target that generates few particles during sputtering, and a method for manufacturing such a sputtering target.

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