The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Aug. 31, 2018
Nexchip Semiconductor Corporation, Hefei, Anhui, CN;
NEXCHIP SEMICONDUCTOR CORPORATION, Hefei, Anhui, CN;
Abstract
A method for forming a metal silicide layer, a semiconductor device and a method for fabricating the device are disclosed. Through depositing a buffer layer between a metal layer and a substrate, metal atoms in the metal layer will diffuse, during a thermal annealing process, through the buffer layer into the substrate while being buffered by the buffer layer. As a result, the diffusion speed and depth of the metal atoms in the substrate are both reduced, and a reaction between the metal and silicon in the substrate is hence slowed down. In this way, the risk of agglomeration of the resulting metal silicide can be effectively lowered, avoiding pinhole defects occurring in the substrate and improving the interface roughness of the resulting metal silicide layer.