The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Mar. 30, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Shin'ichi Nakamata, Matsumoto, JP;
Takashi Shiigi, Matsumoto, JP;
Yasuyuki Hoshi, Matsumoto, JP;
Yuichi Harada, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate, a first semiconductor layer, a first semiconductor region, a second semiconductor layer, a second semiconductor region, a third semiconductor region, a fourth semiconductor sub-region, a first electrode, a gate insulating film, a gate electrode, and second electrode. At a corner part of an active region in which a main current flows, a fifth semiconductor sub-region is provided. An impurity concentration of the fifth semiconductor sub-region is higher than an impurity concentration of the second semiconductor layer.