The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Apr. 18, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Bo-Tsung Tsai, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for fabricating an image sensor is provided. In the method, at first, a semiconductor substrate having a top portion and a bottom portion is provided. Then, a light-sensitive element is formed in the bottom portion of the semiconductor substrate. Thereafter, the top portion of the semiconductor substrate is etched to form a post structure on the bottom portion of the semiconductor substrate. Thereafter, a gate dielectric layer and a conductive layer are sequentially formed to cover the bottom portion of the semiconductor substrate and the post structure. Then, the gate dielectric layer and the conductive layer are etched to form a vertical gate structure on the light-sensitive element.