The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
May. 31, 2017
Qualcomm Incorporated, San Diego, CA (US);
Youn Sung Choi, San Diego, CA (US);
Samit Sengupta, San Diego, CA (US);
Shashank Ekbote, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Aspects for reducing or avoiding mechanical stress in static random access memory (SRAM) strap cells are disclosed herein. An exemplary SRAM strap cell includes a P-type doped well (Pwell) tap electrically coupled to a first supply rail to distribute a first supply voltage to a Pwell region of corresponding SRAM bit cell rows. The SRAM strap cell also includes an N-type doped well (Nwell) tap electrically coupled to a second supply rail to distribute a second supply voltage to an Nwell region of corresponding SRAM bit cell rows. In one exemplary aspect, the Nwell tap can include multiple supply contacts used to couple the second supply rail to the SRAM strap cell to reduce mechanical stress in the Nwell tap. In another exemplary aspect, the Pwell tap can include non-active gates disposed across multiple Fins to stabilize the Fins and reduce or avoid mechanical stress in the Pwell tap.