The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Dec. 05, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Xiangdong Chen, San Diego, CA (US);

Sorin Adrian Dobre, San Diego, CA (US);

Hyeokjin Lim, San Diego, CA (US);

Venugopal Boynapalli, San Marcos, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/8238 (2006.01); G06F 17/50 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 17/5081 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01);
Abstract

In certain aspects, a semiconductor die includes a first cell and a second cell. The first cell includes first transistors, and a first interconnect structure interconnecting the first transistors to form a first circuit. The second cell includes second transistors, and a second interconnect structure interconnecting the second transistors to form a second circuit. The first circuit and the second circuit are configured to perform a same function, and a length of the first cell in a first lateral direction is greater than a length of the second cell in the first lateral direction.


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