The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Jul. 25, 2017
Applicant:
Hansol Chemical Co., Ltd, Seoul, KR;
Inventors:
Jung-Woo Park, Seoul, KR;
Hong-Ki Kim, Seoul, KR;
Mi-Ra Park, Jeollabuk-do, KR;
Jun-Hyuck Kwon, Chungcheongbuk-do, KR;
Assignee:
Hansol Chemical Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); C07F 17/00 (2006.01); C23C 16/40 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28194 (2013.01); C07F 17/00 (2013.01); C23C 16/405 (2013.01); C23C 16/45525 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02205 (2013.01); H01L 29/517 (2013.01);
Abstract
The present invention relates to a vapor deposition compound which serves to deposit a thin film through vapor deposition. More particularly, the present invention relates to vapor deposition zirconium, titanium, and hafnium precursors which are applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which have low viscosity, excellent thermal stability, and fast self-saturation, and a method of preparing the same.