The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Dec. 06, 2013
Applicant:
Jx Nippon Mining & Metals Corporation, Tokyo, JP;
Inventors:
Shinichiro Senda, Ibaraki, JP;
Kotaro Nagatsu, Ibaraki, JP;
Assignee:
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22F 1/18 (2006.01); C23C 14/16 (2006.01); C22C 27/02 (2006.01); H01J 37/34 (2006.01); C01B 21/06 (2006.01); C23C 14/34 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); C01B 21/0617 (2013.01); C22C 27/02 (2013.01); C22F 1/18 (2013.01); C23C 14/16 (2013.01); C23C 14/3414 (2013.01); H01L 21/2855 (2013.01); H01L 21/76841 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less. By controlling the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.