The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Oct. 17, 2017
Applicant:

Nuflare Technology, Inc., Yokohama-shi, JP;

Inventor:

Tsubasa Nanao, Yokohama, JP;

Assignee:

NUFLARE TECHNOLOGY, INC., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/21 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/21 (2013.01); H01J 37/3177 (2013.01); H01J 2237/216 (2013.01);
Abstract

A multibeam-focus adjusting method in a charged-particle-beam lithography apparatus that draws a pattern by irradiating a sample with multibeams having a plurality of beam lines through a plurality of lines of opening portions provided on an aperture member, the method adjusting a focus of the multibeams and including: acquiring a rotation angle of the beam lines with respect to an end edge of a mark provided at a predetermined position; determining selection beams to be used for adjustment among the multibeams based on the acquired rotation angle; and adjusting a focus of the multibeams based on reflected electrons acquired by irradiating the mark with the selection beams and scanning the mark in a direction orthogonal to the end edge of the mark.


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