The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Mar. 20, 2018
SK Hynix Inc., Gyeonggi-do, KR;
Hee Youl Lee, Gyeonggi-do, KR;
Kyoung Cheol Kwon, Gyeonggi-do, KR;
Dong Hun Lee, Gyeonggi-do, KR;
Min Kyu Jeong, Chungcheongbuk-do, KR;
Sung Yong Chung, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
The invention is directed to an electronic device. A memory device having improved reliability according to an embodiment includes a memory cell array including a plurality of memory cells, a peripheral circuit performing a program operation on selected memory cells, among the plurality of memory cells, and a control logic controlling the peripheral circuit to perform an additional program operation on memory cells corresponding to a deep erased state where the memory cells has a threshold voltage having a lower voltage level than a threshold voltage of an erase state, among the selected memory cells, after the program operation is completed.