The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Mar. 07, 2018
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Yoshisato Yokoyama, Tokyo, JP;

Takeshi Hashizume, Tokyo, JP;

Toshiaki Sano, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/419 (2006.01); G11C 11/417 (2006.01); G11C 8/08 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); G11C 8/08 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 5/147 (2013.01); G11C 29/50 (2013.01); G11C 2029/5006 (2013.01); G11C 2207/2254 (2013.01);
Abstract

A semiconductor device includes a memory unit having a memory cell driven by a voltage applied from power supply lines VSS and VDD, and a memory unit potential controller for adjusting the potential of the voltage applied to the memory cell. The memory unit potential controller includes a first potential adjustment part provided between the power supply lines VSS and ARVSS, and a second potential adjustment part provided between the power supply lines VDD and ARVSS. Further, the memory unit potential controller adjusts the potential of the power supply line ARVSS based on a first current supplied between the power supply line VSS and a first end portion of the memory cell through the first potential adjustment part, and adjusts a second current supplied between the power supply lines VDD and ARVSS through the second potential adjustment part, in order to rapidly stabilize the potential applied to the memory cell.


Find Patent Forward Citations

Loading…