The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Nov. 12, 2018
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Yusuke Mochizuki, Kanagawa, JP;

Atsushi Mukai, Kanagawa, JP;

Motoi Harada, Kanagawa, JP;

Makoto Sawada, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 53/22 (2006.01); B01D 69/12 (2006.01); B01D 71/40 (2006.01); B01D 69/02 (2006.01); B01D 71/10 (2006.01); B01D 71/32 (2006.01); B01D 71/64 (2006.01); B01D 71/70 (2006.01);
U.S. Cl.
CPC ...
B01D 53/22 (2013.01); B01D 53/228 (2013.01); B01D 69/12 (2013.01); B01D 71/40 (2013.01); B01D 69/02 (2013.01); B01D 71/10 (2013.01); B01D 71/32 (2013.01); B01D 71/64 (2013.01); B01D 71/70 (2013.01); B01D 2256/10 (2013.01); B01D 2256/12 (2013.01); B01D 2256/16 (2013.01); B01D 2256/18 (2013.01); B01D 2256/20 (2013.01); B01D 2256/24 (2013.01); B01D 2256/245 (2013.01); B01D 2257/302 (2013.01); B01D 2257/304 (2013.01); B01D 2257/308 (2013.01); B01D 2257/404 (2013.01); B01D 2257/504 (2013.01); B01D 2325/04 (2013.01);
Abstract

A gas separation membrane, the gas separation membrane module, and the gas separation device include a first separation layer, and a second separation layer, the first separation layer has an Si/C ratio of 0.3 or less, the Si/C ratio being a ratio of the number of silicon atoms to the number of carbon atoms at the interface of the first separation layer on the second separation layer side, the second separation layer has a maximum value of an F/C ratio of 0.20 or more, the F/C ratio being a ratio of the number of fluorine atoms to the number of carbon atoms, and an Si/C ratio of 0.3 or less in a portion where the F/C ratio is maximum.


Find Patent Forward Citations

Loading…