The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Dec. 28, 2016
Intel Corporation, Santa Clara, CA (US);
Svetozar Broussev, Linz, AT;
Andreas Jörn Leistner, Grasbrunn, DE;
Andreas Roithmeier, Munich, DE;
Thomas Gustedt, München, DE;
Intel Corporation, Santa Clara, CA (US);
Abstract
Various designs for MOS transistor-based RF switch topologies for high speed capacitive tuning of oscillators switch circuits include a main switch device comprising a gate connected to a control terminal, a drain connected to a first terminal that is connected to the first capacitor, and a source connected to a second terminal that is connected to the second capacitor. The switch further comprises a first NMOS device having a gate connected to the main switch device gate, a source connected to a ground, and a drain connected to the first terminal. The switch further comprises a second NMOS device having a gate connected to the main switch device gate, a source connected to a ground, and a drain connected to the second terminal. The switch further comprises a pair of PMOS devices each having drains connected respectively to the first and second terminals.