The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Oct. 28, 2016
Everspin Technologies, Inc., Chandler, AZ (US);
Kerry Joseph Nagel, Scottsdale, AZ (US);
Wenchin Lin, Chandler, AZ (US);
Sarin A. Deshpande, Chandler, AZ (US);
Jijun Sun, Chandler, AZ (US);
Sanjeev Aggarwal, Scottsdale, AZ (US);
Chaitanya Mudivarthi, Sunnyvale, CA (US);
Everspin Technologies, Inc., Chandler, AZ (US);
Abstract
A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching the first encapsulation layer which is disposed over the exposed surface of the dielectric layer. The method further includes (a) depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer and (b) depositing a third encapsulation layer: (i) on the second encapsulation layer which is on the first encapsulation layer and the exposed surface of the dielectric layer. The method also includes etching the remaining layers of the stack/structure (via one or more etch processes).