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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10483380 B1

PDFFull Text
Date of Patent:
Nov. 19, 2019

Filed:

Jul. 21, 2017

Semiconductor device and method of manufacturing the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Aryan Afzalian, Chastre, BE;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/205 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); B82Y 10/00 (2011.01); H01L 29/267 (2006.01); H01L 29/423 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); B82Y 10/00 (2013.01); H01L 29/045 (2013.01); H01L 29/0676 (2013.01); H01L 29/083 (2013.01); H01L 29/0834 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/267 (2013.01); H01L 29/42376 (2013.01); H01L 29/66439 (2013.01); H01L 29/66522 (2013.01); H01L 29/66545 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/7391 (2013.01); H01L 29/068 (2013.01); H01L 29/785 (2013.01); H01L 29/78642 (2013.01);
Abstract

A semiconductor device includes a source region having a first dopant and a drain region having a second dopant. The first dopant is different from the second dopant. A channel region is in between the source and drain region. The channel region is intrinsic. A tunnel barrier layer disposed in between the drain region and the channel region. A gate stack disposed on the channel region. The source region comprises GaSb, the drain region comprises InAs, the channel region comprises InAs, and the tunnel barrier layer comprises InGaAs. The gate stack wraps around the channel region and partially overlaps the tunnel barrier layer.

Find Patent Forward Citations

Afzalian, Aryan. (2019). Semiconductor device and method of manufacturing the same (U.S. Patent No. 10483380). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10483380

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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