The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Aug. 18, 2016
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Shiroyasu Watanabe, Jyoetsu, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method for determining front and back of a single-crystal wafer including: using, as the single-crystal wafer, one having a crystal plane which is laterally asymmetrical to a reference direction connecting a center of a cut for orientation identification formed in an end face of the single-crystal wafer with a center of the single-crystal wafer; noticing the laterally asymmetrical crystal plane, applying an X-ray to the single-crystal wafer, and detecting a diffracted X-ray to measure an angle formed between an orientation of the noticed crystal plane and the reference direction; and determining whether a surface of the single-crystal wafer is a front surface or a back surface from a value of the measured angle. Consequently, the method for determining a front and a back of a single-crystal wafer which can assuredly determine the front and the back of the single-crystal wafer and is superior in cost can be provided.