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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10483135 B1

PDFFull Text
Date of Patent:
Nov. 19, 2019

Filed:

Mar. 08, 2018

Etching method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Kenji Ouchi, Yamanashi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Fenwick & West LLP

Primary Examiner:

Nadine G Norton

Assistant Examiner:

Mahmoud Dahimene

Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); C23C 16/045 (2013.01); C23C 16/34 (2013.01); H01J 37/32 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/6719 (2013.01); H01J 37/3211 (2013.01); H01J 37/3244 (2013.01); H01J 2237/334 (2013.01); H01L 21/768 (2013.01);
Abstract

An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves. The method includes supplying a first gas into a processing chamber, and supplying a second gas and a high frequency power to generate a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. The etching target film is made of a material that is dry etched by using fluorine, and portions of the etching target film covering the surfaces of the grooves are selectively removed.

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