The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
May. 31, 2018
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31053 (2013.01); H01L 21/76819 (2013.01); H01L 43/12 (2013.01); H01L 43/08 (2013.01);
Abstract
A low-k dielectric layer, such as SiCOH, with high and stable chemical mechanical polishing (CMP) removal rate (RR) is disclosed. The polishing rate enhancer (PRE) is disposed on the low-k dielectric layer. The PRE increases the CMP RR during CMP. Furthermore, the PRE stabilizes the increases CMP RR. This is particularly useful, for example, for memory applications in which the storage unit is formed in a low-k back-end-of-line (BEOL) dielectric layer. For example, the topography created can be quickly planarized by CMP while producing a uniform polished surface of the low-k dielectric layer due to the shortened processing time.