The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Sep. 20, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Shinichi Miyatake, Sagamihara, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/06 (2006.01); G11C 11/4091 (2006.01); G11C 11/4096 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 7/00 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G11C 11/4096 (2013.01); G11C 7/06 (2013.01);
Abstract
Memory devices may employ flip-flops with paired transistors in sense amplifying circuitry to sense charges stored in memory cells. Paired transistors may present mismatches in electrical characteristics, which may affect the sensitivity of the sense amplifying circuitry. Embodiments include systems and methods that compensate and/or mitigate mismatches in the electrical characteristics of the paired transistors. To that end, the memory devices may sense the mismatches during a compensation period and pre-compensate the read-out of data lines to improve the sensibility of the sense amplifying circuitry.