The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jun. 09, 2017
Imec Vzw, Leuven, BE;
Christopher Ausschnitt, Heverlee, BE;
Vincent Truffert, Woluwe Saint-Pierre, BE;
IMEC VZW, Leuven, BE;
Abstract
Examples herein are related to a method and apparatus for determining dimensions of features in a patterned layer of a chip produced on a semiconductor production wafer. The production of the patterned layer includes a lithography step and an etching step, where the lithographic mask applied for producing the patterned layer is provided with one or more asymmetric marks. The position of printed and etched mark features is sensitive to lithographic and etch parameters. Changes in these positions are measured by overlay measurements, i.e. the measurement of the change in position of one mark relative to another. The obtained 'pseudo' overlay data are fitted to a parametric model, while characteristic feature dimensions are measured on a test wafer. The inverted model allows determination of feature dimensions on a production wafer. Application of the method on two different layers allows determination of edge placement errors between features of the two layers.