The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Dec. 01, 2017
Applicant:

Hoya Corporation, Shinjuku-ku, Tokyo, JP;

Inventors:

Yohei Ikebe, Tokyo, JP;

Takahiro Onoue, Tokyo, JP;

Tsutomu Shoki, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/26 (2012.01); G03F 1/38 (2012.01); G03F 1/48 (2012.01); G03F 7/20 (2006.01); C23C 14/06 (2006.01); C23C 14/18 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/26 (2013.01); G03F 1/38 (2013.01); G03F 1/48 (2013.01); G03F 7/2004 (2013.01); C23C 14/0641 (2013.01); C23C 14/185 (2013.01);
Abstract

A reflective mask blank that comprises a multilayer reflective filmprotective filmand phase-shift filmfor shifting a phase of the EUV light, which are formed in said order on a substrateThe protective filmis made of a material containing ruthenium as a main component, and an anti-diffusion layerwhich is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective filmor as a part of the protective filmon a side adjacent to the phase-shift layerso as to inhibit counter diffusion in relation to the phase-shift filmthereby inhibiting the thermal diffusion between the protective filmand the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.


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