The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
May. 21, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Jian Qiang Hu, Shanghai, CN;
Abstract
Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication process includes providing a semiconductor substrate having a first region and a second region and having a plurality of first fins in the first region and a plurality of second fins in the second region; performing a first oxidation process on the first fins to form a first oxide layer on surfaces of the first fins and to cause corners between top surfaces and side surface of the first fins to form first rounded corners; and performing a second oxidation process on the second fins to form a second oxide layer on surfaces of the second fins and to cause corners between top surfaces and side surface of the second fins to form second rounded corners. A radius of curvature of the first rounded corner is different from a radius of curvature of the second rounded corner.