The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
May. 21, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Wei-Lun Hsu, Taichung, TW;
Hsin-Che Huang, Tainan, TW;
Shyan-Liang Chou, Tainan, TW;
Hung-Lin Shih, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for forming a complementary metal oxide semiconductor device is disclosed. First, a substrate having a first device region and a second device region is provided. A first trench is formed in the first device region and filled with a first material. A second trench is formed in the second device region and filled with a second material. The first material and the second material comprise different stresses. After that, a first gate structure and a second gate structure are formed on the first material and the second material and completely covering the first trench and the second trench, respectively.