logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10475908 B1

PDFFull Text
Date of Patent:
Nov. 12, 2019

Filed:

Jul. 26, 2017

Semiconductor device and method of fabricating the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Aryan Afzalian, Chastre, BE;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); H01L 29/0653 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/4238 (2013.01); H01L 29/66522 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/7391 (2013.01); H01L 29/7827 (2013.01); H01L 29/7853 (2013.01);
Abstract

A semiconductor device includes a channel region, a source region having a first type semiconductor and a drain region having a second type semiconductor on opposing sides of the channel region. A gate stack is disposed over the channel region. A low-k spacer is disposed over the source region and abreast the gate stack. The source region includes a first type dopant, and the drain region includes a second type dopant. A pocket is disposed between the channel region and the source region. The pocket has the first type semiconductor and a higher first type dopant concentration than a first type dopant concentration of the source region.

Find Patent Forward Citations

Afzalian, Aryan. (2019). Semiconductor device and method of fabricating the same (U.S. Patent No. 10475908). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10475908

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…