The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Nov. 06, 2017
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventors:
Xi Lin, Shanghai, CN;
Yi Hua Shen, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10879 (2013.01); H01L 27/10826 (2013.01); H01L 27/2436 (2013.01); H01L 28/92 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/124 (2013.01); H01L 45/16 (2013.01);
Abstract
Dynamic random access memory (DRAM) and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate; forming an interlayer dielectric layer over the base substrate; forming an opening passing through the interlayer dielectric layer; and forming a memory structure, having a first conductive layer, a memory medium layer on the first conductive layer, and a second conductive layer on the memory medium layer, in the opening.