The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
May. 31, 2018
Globalfoundries Inc., Grand Cayman, KY;
Hui Zang, Guilderland, NY (US);
Garo Jacques Derderian, Saratoga Springs, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Chun Yu Wong, Ballston Lake, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Shesh Mani Pandey, Saratoga Springs, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
First and second fin-type field effect transistors (finFETs) are formed laterally adjacent one another extending from a top surface of an isolation layer. The first finFET has a first fin structure and the second finFET has a second fin structure. An insulator layer is on the first fin structure and the second fin structure. A gate conductor intersects the first fin structure and the second fin structure, and at least the insulator layer separates the gate conductor from the first fin structure and the second fin structure. Source and drain structures are on the first fin structure and the second fin structure laterally adjacent the gate conductor. The first fin structure has sidewalls that include a step and the second fin structure has sidewalls that do not include the step. The step is approximately parallel to the surface of the isolation layer.