The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Jul. 13, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tai-Yen Peng, Hsinchu, TW;

Chia-Tien Wu, Taichung, TW;

Jye-Yen Cheng, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/7681 (2013.01); H01L 21/7684 (2013.01); H01L 21/76805 (2013.01); H01L 21/76807 (2013.01); H01L 21/76814 (2013.01); H01L 21/76826 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53204 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53257 (2013.01); H01L 23/53295 (2013.01); H01L 21/76852 (2013.01); H01L 21/76885 (2013.01); H01L 23/53242 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate and a first conductive feature over the semiconductor substrate. The semiconductor device also includes a first dielectric layer over the semiconductor substrate and surrounding the first conductive feature. The semiconductor device further includes a second conductive feature over the first conductive feature. A bottom surface of the second conductive feature is between a top surface of the first conductive feature and a bottom surface of the first conductive feature. In addition, the semiconductor device includes a second dielectric layer over the first dielectric layer and surrounding the second conductive feature. The semiconductor device also includes an etch stop layer between the first dielectric layer and the second dielectric layer. A top surface of the etch stop layer is between the top surface and the bottom surface of the first conductive feature.


Find Patent Forward Citations

Peng, Tai-Yen. (2019). Structure and formation method of damascene structure (U.S. Patent No. 10475703). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10475703

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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