The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Jun. 16, 2016
Applicant:

Tdk Electronics Ag, München, DE;

Inventors:

Masakazu Hirose, Tokyo, JP;

Tomoya Imura, Tokyo, JP;

Tomohiro Terada, Tokyo, JP;

Goushi Tauchi, Tokyo, JP;

Assignee:

TDK ELECTRONICS AG, München, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/475 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01); H01B 3/12 (2006.01); H01G 4/232 (2006.01); H01G 4/248 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); C04B 35/475 (2013.01); H01B 3/12 (2013.01); H01G 4/12 (2013.01); H01G 4/1218 (2013.01); H01G 4/30 (2013.01); C04B 2235/3203 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3213 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3236 (2013.01); C04B 2235/3255 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3298 (2013.01); H01G 4/232 (2013.01); H01G 4/248 (2013.01);
Abstract

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes particles having a perovskite crystal structure including at least Bi, Na, Sr and Ti, wherein the content of the at least one element selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Ba, Ca, Mg or Zn is between 0.5 molar parts and 11.1 molar parts, taking the Ti content of the dielectric composition as 100 molar parts, wherein 0.17≤α≤2.83, where α is the molar ratio of Bi with respect to Sr in the dielectric composition, and wherein at least some of the particles include a high-Bi phase having a Bi concentration of at least 1.2 times the mean Bi concentration of the dielectric composition as a whole.


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