The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Oct. 18, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Thomas R. Omstead, Boise, ID (US);
Cole S. Franklin, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01); H01L 27/24 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 45/124 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); C23C 16/45534 (2013.01); C23C 16/45542 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02274 (2013.01); H01L 21/02315 (2013.01); H01L 21/283 (2013.01); H01L 27/2481 (2013.01); H01L 45/065 (2013.01); H01L 45/126 (2013.01); H01L 45/141 (2013.01); H01L 21/76829 (2013.01); H01L 45/06 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/16 (2013.01);
Abstract
A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.